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Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US09/386,313 priority Critical patent/US6483171B1/en Application filed by Micron Technology Inc filed Critical Micron Technology Inc Assigned to MICRON TECHNOLOGY, INC. Original Assignee Micron Technology Inc Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Reinberg Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US09/386,313 Inventor Leonard Forbes Wendell P.
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Google Patents Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming sameĭownload PDF Info Publication number US6483171B1 US6483171B1 US09/386,313 US38631399A US6483171B1 US 6483171 B1 US6483171 B1 US 6483171B1 US 38631399 A US38631399 A US 38631399A US 6483171 B1 US6483171 B1 US 6483171B1 Authority US United States Prior art keywords higher order processor transistors nmos memory circuit Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6483171B1 - Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same US6483171B1 - Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
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